Goford Semiconductor G09N06S2

N+N 60V,9A,RD<18M@10V,VTH1.2V~2.

Manufacturer: Goford Semiconductor
Manufacturer's number: Goford Semiconductor G09N06S2
Package: Tape & Reel (TR)
Datasheet: -
Stock: 6741
SKU: G09N06S2
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Details

Parameters
Mfr	Goford Semiconductor
Series	-
Package	Tape & Reel (TR)
Product Status	Active
Technology	MOSFET (Metal Oxide)
Configuration	2 N-Channel
FET Feature	Standard
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	9A (Tc)
Rds On (Max) @ Id, Vgs	18mOhm @ 9A, 10V
Vgs(th) (Max) @ Id	2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	47nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	2180pF @ 30V
Power - Max	2.6W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package	8-SOP
RoHS Status	RoHS Compliant
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0000
Other Names	3141-G09N06S2TR
Standard Package	4,000

Mosfet Array 60V 9A (Tc) 2.6W (Tc) Surface Mount 8-SOP