Goford Semiconductor G2012

N20V,RD(MAX)<12M@4.5V,RD(MAX)<18

Manufacturer: Goford Semiconductor
Manufacturer's number: Goford Semiconductor G2012
Package: Tape & Reel (TR)
Datasheet: PDF
Stock: 3
SKU: G2012
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Details

Parameters
Power Dissipation (Max)	1.5W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	6-DFN (2x2)
Package / Case	6-WDFN Exposed Pad
RoHS Status	ROHS3 Compliant
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	3,000
Mfr	Goford Semiconductor
Series	-
Package	Tape & Reel (TR)
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20 V
Current - Continuous Drain (Id) @ 25°C	12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
Rds On (Max) @ Id, Vgs	12mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	29 nC @ 10 V
Vgs (Max)	±10V
Input Capacitance (Ciss) (Max) @ Vds	1255 pF @ 10 V
FET Feature	-

N-Channel 20 V 12A (Tc) 1.5W (Tc) Surface Mount 6-DFN (2x2)