Goford Semiconductor G250N03IE

N30V,ESD 5.3A,RD<25M@10V,VTH0.5V

Manufacturer: Goford Semiconductor
Manufacturer's number: Goford Semiconductor G250N03IE
Package: Tape & Reel (TR)
Datasheet: PDF
Stock: 9
SKU: G250N03IE
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Details

Parameters
Mfr	Goford Semiconductor
Series	-
Package	Tape & Reel (TR)
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	5.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 10V
Rds On (Max) @ Id, Vgs	25mOhm @ 4A, 10V
Vgs(th) (Max) @ Id	1.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	9.1 nC @ 4.5 V
Vgs (Max)	±10V
Input Capacitance (Ciss) (Max) @ Vds	573 pF @ 15 V
FET Feature	-
Power Dissipation (Max)	1.4W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-23-3
Package / Case	TO-236-3, SC-59, SOT-23-3
RoHS Status	RoHS Compliant
ECCN	EAR99
HTSUS	8541.29.0000
Standard Package	3,000

N-Channel 30 V 5.3A (Tc) 1.4W (Tc) Surface Mount SOT-23-3