Parameters |
Mfr |
Goford Semiconductor |
Series |
G |
Package |
Tape & Reel (TR) |
Product Status |
Active |
FET Type |
P-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
60 V |
Current - Continuous Drain (Id) @ 25°C |
40A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Rds On (Max) @ Id, Vgs |
30mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id |
3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs |
49 nC @ 10 V |
Vgs (Max) |
±20V |
Input Capacitance (Ciss) (Max) @ Vds |
2705 pF @ 30 V |
FET Feature |
- |
Power Dissipation (Max) |
50W (Tc) |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Surface Mount |
Supplier Device Package |
8-DFN (4.9x5.75) |
Package / Case |
8-PowerTDFN |
RoHS Status |
ROHS3 Compliant |
REACH Status |
REACH Unaffected |
ECCN |
EAR99 |
Standard Package |
5,000 |
P-Channel 60 V 40A (Tc) 50W (Tc) Surface Mount 8-DFN (4.9x5.75)