Parameters |
Mfr |
Goford Semiconductor |
Series |
- |
Package |
Tape & Reel (TR) |
Product Status |
Active |
FET Type |
P-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
30 V |
Current - Continuous Drain (Id) @ 25°C |
4.1A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) |
4.5V, 10V |
Rds On (Max) @ Id, Vgs |
59mOhm @ 2.1A, 10V |
Vgs(th) (Max) @ Id |
2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs |
12.5 nC @ 10 V |
Vgs (Max) |
±20V |
Input Capacitance (Ciss) (Max) @ Vds |
650 pF @ 15 V |
FET Feature |
- |
Power Dissipation (Max) |
1.4W (Ta) |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Surface Mount |
Supplier Device Package |
SOT-23-3 |
Package / Case |
TO-236-3, SC-59, SOT-23-3 |
RoHS Status |
ROHS3 Compliant |
Moisture Sensitivity Level (MSL) |
3 (168 Hours) |
REACH Status |
REACH Unaffected |
ECCN |
EAR99 |
HTSUS |
8541.29.0095 |
Standard Package |
3,000 |
P-Channel 30 V 4.1A (Ta) 1.4W (Ta) Surface Mount SOT-23-3