Goford Semiconductor G30N02T

N20V,RD(MAX)<13M@4.5V,VTH0.5V~1.

Manufacturer: Goford Semiconductor
Manufacturer's number: Goford Semiconductor G30N02T
Package: Tube
Datasheet: PDF
Stock: 8816
SKU: G30N02T
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Details

Parameters
Mfr	Goford Semiconductor
Series	-
Package	Tube
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20 V
Current - Continuous Drain (Id) @ 25°C	30A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V
Rds On (Max) @ Id, Vgs	13mOhm @ 20A, 4.5V
Vgs(th) (Max) @ Id	1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	15 nC @ 10 V
Vgs (Max)	±12V
Input Capacitance (Ciss) (Max) @ Vds	900 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	40W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220
Package / Case	TO-220-3
RoHS Status	ROHS3 Compliant
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	50

N-Channel 20 V 30A (Ta) 40W (Ta) Through Hole TO-220