Goford Semiconductor G66

P-16V,-5.8A,RD(MAX)<45M@-4.5V,VT

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Details

P-Channel 16 V 5.8A (Ta) 1.7W (Ta) Surface Mount 6-DFN (2x2)

Parameters
Mfr	Goford Semiconductor
Series	G
Package	Tape & Reel (TR)
Product Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	16 V
Current - Continuous Drain (Id) @ 25°C	5.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
Rds On (Max) @ Id, Vgs	45mOhm @ 4.1A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	7.8 nC @ 4.5 V
Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	740 pF @ 4 V
FET Feature	-
Power Dissipation (Max)	1.7W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	6-DFN (2x2)
Package / Case	6-WDFN Exposed Pad
RoHS Status	ROHS3 Compliant
REACH Status	REACH Unaffected
ECCN	EAR99
Standard Package	3,000