Goford Semiconductor G700P06T

P-60V,25A,RD<70M@-10V,VTH1V~-2.5

Manufacturer: Goford Semiconductor
Manufacturer's number: Goford Semiconductor G700P06T
Package: Tube
Datasheet: PDF
Stock: 9970
SKU: G700P06T
Pricing:we created an exceptionally flexible and competitive pricing policy.

Quantity:

Add to RFQ list

Details

Parameters
Mfr	Goford Semiconductor
Series	-
Package	Tube
Product Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	25A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	70mOhm @ 4A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	23 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1428 pF @ 30 V
FET Feature	-
Power Dissipation (Max)	100W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220
Package / Case	TO-220-3
RoHS Status	ROHS3 Compliant
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	50

P-Channel 60 V 25A (Tc) 100W (Tc) Through Hole TO-220