Goford Semiconductor GC11N65D5

N650V, 11A,RD<360M@10V,VTH2.5V~4

Manufacturer: Goford Semiconductor
Manufacturer's number: Goford Semiconductor GC11N65D5
Package: Tape & Reel (TR)
Datasheet: PDF
Stock: 10
SKU: GC11N65D5
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Unit Price: $0.6760

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Details

Parameters
Mfr	Goford Semiconductor
Series	G
Package	Tape & Reel (TR)
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	11A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	360mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	901 pF @ 50 V
FET Feature	-
Power Dissipation (Max)	78W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-DFN (4.9x5.75)
Package / Case	8-PowerTDFN
RoHS Status	ROHS3 Compliant
REACH Status	REACH Unaffected
ECCN	EAR99
Standard Package	5,000

N-Channel 650 V 11A (Tc) 78W (Tc) Surface Mount 8-DFN (4.9x5.75)