Goford Semiconductor GT025N06AM6

N60V,170A,RD<2.0M@10V,VTH1.2V~2.

Manufacturer: Goford Semiconductor
Manufacturer's number: Goford Semiconductor GT025N06AM6
Package: Tape & Reel (TR)
Datasheet: -
Stock: 7180
SKU: GT025N06AM6
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Unit Price: $1.3230

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Details

Parameters
Mfr	Goford Semiconductor
Series	-
Package	Tape & Reel (TR)
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	170A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	2mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	70 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	5058 pF @ 30 V
FET Feature	-
Power Dissipation (Max)	215W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO263-6
Package / Case	TO-263-7, D²Pak (6 Leads + Tab)
RoHS Status	RoHS Compliant
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0000
Other Names	3141-GT025N06AM6TR
Standard Package	800

N-Channel 60 V 170A (Tc) 215W (Tc) Surface Mount TO263-6