Goford Semiconductor GT030N08T

N85V,200A,RD<3.0M@10V,VTH2.0V~4.

Manufacturer: Goford Semiconductor
Manufacturer's number: Goford Semiconductor GT030N08T
Package: Tube
Datasheet: -
Stock: 4638
SKU: GT030N08T
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Details

Parameters
FET Feature	-
Power Dissipation (Max)	260W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220
Package / Case	TO-220-3
RoHS Status	RoHS Compliant
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0000
Other Names	3141-GT030N08T
Standard Package	50
Mfr	Goford Semiconductor
Series	-
Package	Tube
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	85 V
Current - Continuous Drain (Id) @ 25°C	200A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	3mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	112 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	5822 pF @ 50 V

N-Channel 85 V 200A (Tc) 260W (Tc) Through Hole TO-220