Goford Semiconductor GT090N06D52

N60V,RD(MAX)<9M@10V,RD(MAX)<13M@

Manufacturer: Goford Semiconductor
Manufacturer's number: Goford Semiconductor GT090N06D52
Package: Tape & Reel (TR)
Datasheet: PDF
Stock: 10
SKU: GT090N06D52
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Details

Parameters
Mfr	Goford Semiconductor
Series	-
Package	Tape & Reel (TR)
Product Status	Active
Technology	MOSFET (Metal Oxide)
Configuration	2 N-Channel (Dual)
FET Feature	-
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	40A (Tc)
Rds On (Max) @ Id, Vgs	14mOhm @ 14A, 10V
Vgs(th) (Max) @ Id	2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	24nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	1620pF @ 30V
Power - Max	62W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	8-PowerTDFN
Supplier Device Package	8-DFN (4.9x5.75)
Base Product Number	GT090N06
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	3 (168 Hours)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	5,000

Mosfet Array 60V 40A (Tc) 62W (Tc) Surface Mount 8-DFN (4.9x5.75)