Goford Semiconductor GT110N06D5

N60V, 45A,RD<11M@10V,VTH1.0V~2.4

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Details

N-Channel 60 V 45A (Tc) 69W (Tc) Surface Mount 8-DFN (4.9x5.75)

Parameters
Mfr	Goford Semiconductor
Series	GT
Package	Tape & Reel (TR)
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	45A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	11mOhm @ 14A, 10V
Vgs(th) (Max) @ Id	2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	31 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1202 pF @ 30 V
FET Feature	-
Power Dissipation (Max)	69W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-DFN (4.9x5.75)
Package / Case	8-PowerTDFN
RoHS Status	ROHS3 Compliant
REACH Status	REACH Unaffected
ECCN	EAR99
Standard Package	5,000