Vishay Siliconix SIS439DNT-T1-GE3

SIS439DNT-T1-GE3

Manufacturer: Vishay Siliconix
Manufacturer's number: Vishay Siliconix SIS439DNT-T1-GE3
Package: Tape & Reel (TR)
Datasheet: PDF
Stock: 9957
SKU: SIS439DNT-T1-GE3
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Details

Parameters
Mfr	Vishay Siliconix
Series	TrenchFET®
Package	Tape & Reel (TR)
Product Status	Obsolete
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	11mOhm @ 14A, 10V
Vgs(th) (Max) @ Id	2.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	68 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2135 pF @ 15 V
FET Feature	-
Power Dissipation (Max)	3.8W (Ta), 52.1W (Tc)
Operating Temperature	-50°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® 1212-8S
Package / Case	PowerPAK® 1212-8S
Base Product Number	SIS439
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	3,000

P-Channel 30 V 50A (Tc) 3.8W (Ta), 52.1W (Tc) Surface Mount PowerPAK® 1212-8S