Harris Corporation 2N6761

N-CHANNEL POWER MOSFET

Manufacturer: Harris Corporation
Manufacturer's number: Harris Corporation 2N6761
Package: Bulk
Datasheet: PDF
Stock: 4862
SKU: 2N6761
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Details

Parameters
Mfr	Harris Corporation
Series	-
Package	Bulk
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	450 V
Current - Continuous Drain (Id) @ 25°C	4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	2Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id	4V @ 1mA
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	800 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	75W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-3
Package / Case	TO-204AA, TO-3
RoHS Status	RoHS non-compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	Vendor Undefined
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	1

N-Channel 450 V 4A (Tc) 75W (Tc) Through Hole TO-3