Harris Corporation 2N6895

P-CHANNEL, MOSFET

Manufacturer: Harris Corporation
Manufacturer's number: Harris Corporation 2N6895
Package: Bulk
Datasheet: PDF
Stock: 5877
SKU: 2N6895
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Details

Parameters
Mfr	Harris Corporation
Series	-
Package	Bulk
Product Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	1.16A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	3.65Ohm @ 740mA, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	150 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	8.33W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-205AF (TO-39)
Package / Case	TO-205AF Metal Can
RoHS Status	RoHS non-compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	Vendor Undefined
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	21

P-Channel 100 V 1.16A (Tc) 8.33W (Tc) Through Hole TO-205AF (TO-39)