Harris Corporation HUF75309D3S

HUF75309D3S

Manufacturer: Harris Corporation
Manufacturer's number: Harris Corporation HUF75309D3S
Package: Tube
Datasheet: PDF
Stock: 14
SKU: HUF75309D3S
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Details

Parameters
Mfr	Harris Corporation
Series	UltraFET™
Package	Tube
Product Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	55 V
Current - Continuous Drain (Id) @ 25°C	19A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	70mOhm @ 19A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	24 nC @ 20 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	350 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	55W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-252, (D-Pak)
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
RoHS Status	RoHS non-compliant
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	1,800

N-Channel 55 V 19A (Tc) 55W (Tc) Surface Mount TO-252, (D-Pak)