Harris Corporation HUF75639S3

HUF75639S3

Manufacturer: Harris Corporation
Manufacturer's number: Harris Corporation HUF75639S3
Package: Tube
Datasheet: PDF
Stock: 5
SKU: HUF75639S3
Pricing:we created an exceptionally flexible and competitive pricing policy.

Quantity:

Add to Cart

Unit Price: $1.3400

Ext Price: $1.3400

Details

Parameters
Mfr	Harris Corporation
Series	UltraFET™
Package	Tube
Product Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	56A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	25mOhm @ 56A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	130 nC @ 20 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2000 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	200W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	I2PAK (TO-262)
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA
RoHS Status	RoHS non-compliant
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	224

N-Channel 100 V 56A (Tc) 200W (Tc) Through Hole I2PAK (TO-262)