Harris Corporation IRF9633

P-CHANNEL POWER MOSFET

Manufacturer: Harris Corporation
Manufacturer's number: Harris Corporation IRF9633
Package: Bulk
Datasheet: PDF
Stock: 5663
SKU: IRF9633
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Details

Parameters
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	275
Mfr	Harris Corporation
Series	-
Package	Bulk
Product Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	150 V
Current - Continuous Drain (Id) @ 25°C	5.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	1.2Ohm @ 3.5A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	45 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	550 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	75W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220AB
Package / Case	TO-220-3
RoHS Status	RoHS non-compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	Vendor Undefined

P-Channel 150 V 5.5A (Tc) 75W (Tc) Through Hole TO-220AB