Harris Corporation IRFD213

IRFD213

Manufacturer: Harris Corporation
Manufacturer's number: Harris Corporation IRFD213
Package: Tube
Datasheet: PDF
Stock: 5
SKU: IRFD213
Pricing:we created an exceptionally flexible and competitive pricing policy.

Quantity:

Add to Cart

Unit Price: $0.5900

Ext Price: $0.5900

Details

Parameters
Mfr	Harris Corporation
Series	-
Package	Tube
Product Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	250 V
Current - Continuous Drain (Id) @ 25°C	450mA (Ta)
Rds On (Max) @ Id, Vgs	2Ohm @ 270mA, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	140 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	-
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	4-HVMDIP
Package / Case	4-DIP (0.300", 7.62mm)
RoHS Status	RoHS non-compliant
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	2,500

N-Channel 250 V 450mA (Ta) Through Hole 4-HVMDIP