| Parameters |
| Mfr |
Harris Corporation |
| Series |
- |
| Package |
Bulk |
| Product Status |
Active |
| FET Type |
N-Channel |
| Technology |
MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) |
200 V |
| Current - Continuous Drain (Id) @ 25°C |
4.8A (Tc) |
| Rds On (Max) @ Id, Vgs |
800mOhm @ 2.9A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs |
14 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds |
260 pF @ 25 V |
| FET Feature |
- |
| Mounting Type |
Through Hole |
| Supplier Device Package |
TO-251AA |
| Package / Case |
TO-251-3 Short Leads, IPak, TO-251AA |
| Base Product Number |
IRFU2 |
| RoHS Status |
RoHS non-compliant |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| REACH Status |
Vendor Undefined |
| ECCN |
EAR99 |
| HTSUS |
0000.00.0000 |
| Standard Package |
1 |
N-Channel 200 V 4.8A (Tc) Through Hole TO-251AA