Harris Corporation RF1S25N06

25A, 60V, 0.047 OHM, N-CHANNEL P

Manufacturer: Harris Corporation
Manufacturer's number: Harris Corporation RF1S25N06
Package: Bulk
Datasheet: PDF
Stock: 5685
SKU: RF1S25N06
Pricing:we created an exceptionally flexible and competitive pricing policy.

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Details

Parameters
Mfr	Harris Corporation
Series	-
Package	Bulk
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	25A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	47mOhm @ 25A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	80 nC @ 20 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	975 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	72W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	I2PAK (TO-262)
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	1

N-Channel 60 V 25A (Tc) 72W (Tc) Through Hole I2PAK (TO-262)