Harris Corporation RF1S4N100SM9A

MOSFET N-CH 1000V 4.3A TO263AB

Manufacturer: Harris Corporation
Manufacturer's number: Harris Corporation RF1S4N100SM9A
Package: Bulk
Datasheet: PDF
Stock: 187
SKU: RF1S4N100SM9A
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Details

Parameters
Mfr	Harris Corporation
Series	-
Package	Bulk
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	1000 V
Current - Continuous Drain (Id) @ 25°C	4.3A (Tc)
Rds On (Max) @ Id, Vgs	3.5Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Vgs (Max)	±20V
FET Feature	-
Power Dissipation (Max)	150W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-263AB
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
RoHS Status	Not applicable
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	Vendor Undefined
ECCN	EAR99
HTSUS	0000.00.0000
Standard Package	800

N-Channel 1000 V 4.3A (Tc) 150W (Tc) Surface Mount TO-263AB