Harris Corporation RF1S4N100SM9A
MOSFET N-CH 1000V 4.3A TO263AB
- Manufacturer: Harris Corporation
- Manufacturer's number: Harris Corporation RF1S4N100SM9A
- Package: Bulk
- Datasheet: PDF
- Stock: 187
- SKU: RF1S4N100SM9A
- Pricing:we created an exceptionally flexible and competitive pricing policy.
| Parameters | |
|---|---|
| Mfr | Harris Corporation |
| Series | - |
| Package | Bulk |
| Product Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 1000 V |
| Current - Continuous Drain (Id) @ 25°C | 4.3A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.5Ohm @ 2.5A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 150W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-263AB |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| RoHS Status | Not applicable |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | Vendor Undefined |
| ECCN | EAR99 |
| HTSUS | 0000.00.0000 |
| Standard Package | 800 |
N-Channel 1000 V 4.3A (Tc) 150W (Tc) Surface Mount TO-263AB
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