Harris Corporation RF1S640SM

MOSFET N-CH 200V 18A TO263AB

Manufacturer: Harris Corporation
Manufacturer's number: Harris Corporation RF1S640SM
Package: Bulk
Datasheet: PDF
Stock: 665
SKU: RF1S640SM
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Details

Parameters
Mfr	Harris Corporation
Series	-
Package	Bulk
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	200 V
Current - Continuous Drain (Id) @ 25°C	18A (Tc)
Rds On (Max) @ Id, Vgs	180mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	64 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1275 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	125W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-263AB
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
RoHS Status	RoHS non-compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	REACH Affected
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	1

N-Channel 200 V 18A (Tc) 125W (Tc) Surface Mount TO-263AB