Harris Corporation RF1S9640

MOSFET P-CH 200V 11A TO220AB

Manufacturer: Harris Corporation
Manufacturer's number: Harris Corporation RF1S9640
Package: Bulk
Datasheet: PDF
Stock: 4
SKU: RF1S9640
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Unit Price: $1.2000

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Details

Parameters
Mfr	Harris Corporation
Series	-
Package	Bulk
Product Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	200 V
Current - Continuous Drain (Id) @ 25°C	11A (Tc)
Rds On (Max) @ Id, Vgs	500mOhm @ 6A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	90 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1100 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	125W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220AB
Package / Case	TO-220-3
RoHS Status	RoHS non-compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	Vendor Undefined
ECCN	EAR99
HTSUS	0000.00.0000
Standard Package	1

P-Channel 200 V 11A (Tc) 125W (Tc) Through Hole TO-220AB