Harris Corporation RFB18N10CS

MOSFET N-CH 100V 18A TO220AB-5

Manufacturer: Harris Corporation
Manufacturer's number: Harris Corporation RFB18N10CS
Package: Bulk
Datasheet: PDF
Stock: 950
SKU: RFB18N10CS
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Details

Parameters
Mfr	Harris Corporation
Series	-
Package	Bulk
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	18A (Tc)
Rds On (Max) @ Id, Vgs	100mOhm @ 9A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	20 nC @ 10 V
Vgs (Max)	±20V
FET Feature	Current Sensing
Power Dissipation (Max)	79W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220AB-5
Package / Case	TO-220-5
RoHS Status	RoHS non-compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	Vendor Undefined
ECCN	EAR99
HTSUS	0000.00.0000
Standard Package	1

N-Channel 100 V 18A (Tc) 79W (Tc) Through Hole TO-220AB-5