Harris Corporation RFD3N08L

N-CHANNEL POWER MOSFET

Manufacturer: Harris Corporation
Manufacturer's number: Harris Corporation RFD3N08L
Package: Bulk
Datasheet: PDF
Stock: 1
SKU: RFD3N08L
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Details

Parameters
Mfr	Harris Corporation
Series	-
Package	Bulk
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	80 V
Current - Continuous Drain (Id) @ 25°C	3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	5V
Rds On (Max) @ Id, Vgs	800mOhm @ 1.5A, 5V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	8 nC @ 10 V
Vgs (Max)	±10V
FET Feature	-
Power Dissipation (Max)	30W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	I-PAK
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
RoHS Status	RoHS non-compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	Vendor Undefined
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	1

N-Channel 80 V 3A (Tc) 30W (Tc) Through Hole I-PAK