Harris Corporation RFD3N08LSM9A

N-CHANNEL POWER MOSFET

Manufacturer: Harris Corporation
Manufacturer's number: Harris Corporation RFD3N08LSM9A
Package: Bulk
Datasheet: PDF
Stock: 2
SKU: RFD3N08LSM9A
Pricing:we created an exceptionally flexible and competitive pricing policy.

Quantity:

Add to Cart

Unit Price: $0.3300

Ext Price: $0.3300

Details

Parameters
Mfr	Harris Corporation
Series	-
Package	Bulk
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	80 V
Current - Continuous Drain (Id) @ 25°C	3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	5V
Rds On (Max) @ Id, Vgs	800mOhm @ 3A, 5V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	8.5 nC @ 10 V
Vgs (Max)	±10V
Input Capacitance (Ciss) (Max) @ Vds	125 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	30W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-252-3 (DPAK)
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
RoHS Status	Not applicable
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	Vendor Undefined
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	2,500

N-Channel 80 V 3A (Tc) 30W (Tc) Surface Mount TO-252-3 (DPAK)