Harris Corporation RFP12N10L

RFP12N10L

Manufacturer: Harris Corporation
Manufacturer's number: Harris Corporation RFP12N10L
Package: Tube
Datasheet: PDF
Stock: 9607
SKU: RFP12N10L
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Unit Price: $1.0000

Ext Price: $1.0000

Details

Parameters
Mfr	Harris Corporation
Series	-
Package	Tube
Product Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	5V
Rds On (Max) @ Id, Vgs	200mOhm @ 12A, 5V
Vgs(th) (Max) @ Id	2V @ 250µA
Vgs (Max)	±10V
Input Capacitance (Ciss) (Max) @ Vds	900 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	60W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220-3
Package / Case	TO-220-3
RoHS Status	RoHS non-compliant
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	800

N-Channel 100 V 12A (Tc) 60W (Tc) Through Hole TO-220-3