Harris Corporation RFP2N18 - Harris Corporation FETs, MOSFETs - BOM, Chip Distributor, Quick Quotation 365day Warranty
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Harris Corporation RFP2N18

N-CHANNEL, MOSFET

  • Manufacturer: Harris Corporation
  • Manufacturer's number: Harris Corporation RFP2N18
  • Package: Bulk
  • Datasheet: PDF
  • Stock: 7900
  • SKU: RFP2N18
  • Pricing:we created an exceptionally flexible and competitive pricing policy.

Quantity:

Unit Price: $0.2800

Ext Price: $0.2800

Details

Tags

Parameters
Mfr Harris Corporation
Series -
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 180 V
Current - Continuous Drain (Id) @ 25°C 2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 3.5Ohm @ 1A, 10V
Vgs(th) (Max) @ Id 4V @ 2mA
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 200 pF @ 25 V
FET Feature -
Power Dissipation (Max) 25W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220
Package / Case TO-220-3
RoHS Status RoHS non-compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status Vendor Undefined
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 30
N-Channel 180 V 2A (Tc) 25W (Tc) Through Hole TO-220