Harris Corporation RFW2N06RLE

N-CHANNEL POWER MOSFET

Manufacturer: Harris Corporation
Manufacturer's number: Harris Corporation RFW2N06RLE
Package: Bulk
Datasheet: PDF
Stock: 734
SKU: RFW2N06RLE
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Unit Price: $1.8000

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Details

Parameters
Mfr	Harris Corporation
Series	-
Package	Bulk
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	5V
Rds On (Max) @ Id, Vgs	200mOhm @ 2A, 5V
Vgs(th) (Max) @ Id	2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	30 nC @ 10 V
Vgs (Max)	+10V, -5V
Input Capacitance (Ciss) (Max) @ Vds	535 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	1.09W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	4-DIP, Hexdip
Package / Case	4-DIP (0.300", 7.62mm)
RoHS Status	RoHS non-compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	Vendor Undefined
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	1

N-Channel 60 V 2A (Tc) 1.09W (Tc) Through Hole 4-DIP, Hexdip