Infineon Technologies IPP65R660CFDAAKSA1

IPP65R660CFDAAKSA1

Manufacturer: Infineon Technologies
Manufacturer's number: Infineon Technologies IPP65R660CFDAAKSA1
Package: Tube
Datasheet: PDF
Stock: 8105
SKU: IPP65R660CFDAAKSA1
Pricing:we created an exceptionally flexible and competitive pricing policy.

Quantity:

Add to RFQ list

Details

Parameters
Mfr	Infineon Technologies
Series	Automotive, AEC-Q101, CoolMOS™
Package	Tube
Product Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	660mOhm @ 3.2A, 10V
Vgs(th) (Max) @ Id	4.5V @ 200µA
Gate Charge (Qg) (Max) @ Vgs	20 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	543 pF @ 100 V
FET Feature	-
Power Dissipation (Max)	62.5W (Tc)
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PG-TO220-3
Package / Case	TO-220-3
Base Product Number	IPP65R
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Other Names	SP000875802
Standard Package	500

N-Channel 650 V 6A (Tc) 62.5W (Tc) Through Hole PG-TO220-3