Infineon Technologies AIMW120R035M1HXKSA1

1200V COOLSIC MOSFET PG-TO247-3

Manufacturer: Infineon Technologies
Manufacturer's number: Infineon Technologies AIMW120R035M1HXKSA1
Package: Tube
Datasheet: PDF
Stock: 6920
SKU: AIMW120R035M1HXKSA1
Pricing:we created an exceptionally flexible and competitive pricing policy.

Quantity:

Add to Cart

Unit Price: $42.4400

Ext Price: $42.4400

Details

Parameters
Mfr	Infineon Technologies
Series	Automotive, AEC-Q101, CoolSiC™
Package	Tube
Product Status	Active
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	1200 V
Current - Continuous Drain (Id) @ 25°C	52A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	18V
Rds On (Max) @ Id, Vgs	46mOhm @ 25A, 18V
Vgs(th) (Max) @ Id	5.7V @ 10mA
Gate Charge (Qg) (Max) @ Vgs	59 nC @ 18 V
Vgs (Max)	+23V, -7V
Input Capacitance (Ciss) (Max) @ Vds	2130 pF @ 800 V
FET Feature	-
Power Dissipation (Max)	228W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PG-TO247-3-41
Package / Case	TO-247-3
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	30

N-Channel 1200 V 52A (Tc) 228W (Tc) Through Hole PG-TO247-3-41