Infineon Technologies AIMW120R045M1XKSA1

SICFET N-CH 1200V 52A TO247-3

Manufacturer: Infineon Technologies
Manufacturer's number: Infineon Technologies AIMW120R045M1XKSA1
Package: Tube
Datasheet: PDF
Stock: 242
SKU: AIMW120R045M1XKSA1
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Unit Price: $26.9300

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Details

Parameters
Standard Package	30
Mfr	Infineon Technologies
Series	Automotive, AEC-Q101, CoolSiC™
Package	Tube
Product Status	Active
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	1200 V
Current - Continuous Drain (Id) @ 25°C	52A (Tc)
Rds On (Max) @ Id, Vgs	59mOhm @ 20A, 15V
Vgs(th) (Max) @ Id	5.7V @ 10mA
Gate Charge (Qg) (Max) @ Vgs	57 nC @ 15 V
Vgs (Max)	+20V, -7V
Input Capacitance (Ciss) (Max) @ Vds	2130 pF @ 800 V
FET Feature	-
Power Dissipation (Max)	228W (Tc)
Operating Temperature	-40°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PG-TO247-3
Package / Case	TO-247-3
Base Product Number	AIMW120
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095

N-Channel 1200 V 52A (Tc) 228W (Tc) Through Hole PG-TO247-3