Parameters |
Mfr |
Infineon Technologies |
Series |
Automotive, AEC-Q100, HEXFET® |
Package |
Tape & Reel (TR) |
Product Status |
Active |
FET Type |
N-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
40 V |
Current - Continuous Drain (Id) @ 25°C |
100A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Rds On (Max) @ Id, Vgs |
3.1mOhm @ 76A, 10V |
Vgs(th) (Max) @ Id |
3.9V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs |
99 nC @ 10 V |
Vgs (Max) |
±20V |
Input Capacitance (Ciss) (Max) @ Vds |
3171 pF @ 25 V |
FET Feature |
- |
Power Dissipation (Max) |
99W (Tc) |
Operating Temperature |
-55°C ~ 175°C (TJ) |
Mounting Type |
Surface Mount |
Supplier Device Package |
PG-TO252-3-901|DPAK |
Package / Case |
TO-252-3, DPak (2 Leads + Tab), SC-63 |
Base Product Number |
AUIRFR8403 |
RoHS Status |
ROHS3 Compliant |
ECCN |
EAR99 |
HTSUS |
8541.29.0095 |
Standard Package |
3,000 |
N-Channel 40 V 100A (Tc) 99W (Tc) Surface Mount PG-TO252-3-901|DPAK