Infineon Technologies BSB280N15NZ3G

BSB280N15 - 12V-300V N-CHANNEL P

Manufacturer: Infineon Technologies
Manufacturer's number: Infineon Technologies BSB280N15NZ3G
Package: Bulk
Datasheet: PDF
Stock: 1261
SKU: BSB280N15NZ3G
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Details

Parameters
Mfr	Infineon Technologies
Series	OptiMOS™
Package	Bulk
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	150 V
Current - Continuous Drain (Id) @ 25°C	9A (Ta), 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	28mOhm @ 30A, 10V
Vgs(th) (Max) @ Id	4V @ 60µA
Gate Charge (Qg) (Max) @ Vgs	21 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1600 pF @ 75 V
FET Feature	-
Power Dissipation (Max)	2.8W (Ta), 57W (Tc)
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	MG-WDSON-2-5
Package / Case	DirectFET™ Isometric MX
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	1

N-Channel 150 V 9A (Ta), 30A (Tc) 2.8W (Ta), 57W (Tc) Surface Mount MG-WDSON-2-5