Infineon Technologies BSC019N04NSG

BSC019N04 - 12V-300V N-CHANNEL P

Manufacturer: Infineon Technologies
Manufacturer's number: Infineon Technologies BSC019N04NSG
Package: Bulk
Datasheet: -
Stock: 2335
SKU: BSC019N04NSG
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Details

Parameters
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40 V
Current - Continuous Drain (Id) @ 25°C	29A (Ta), 204A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	1.9mOhm @ 50A, 10V
Vgs(th) (Max) @ Id	4V @ 85µA
Gate Charge (Qg) (Max) @ Vgs	108 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	8800 pF @ 20 V
FET Feature	-
Power Dissipation (Max)	2.5W (Ta), 125W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TDSON-8-1
Package / Case	8-PowerTDFN
HTSUS	0000.00.0000
Standard Package	1
Mfr	Infineon Technologies
Series	OptiMOS™ 3
Package	Bulk
Product Status	Active

N-Channel 40 V 29A (Ta), 204A (Tc) 2.5W (Ta), 125W (Tc) Surface Mount PG-TDSON-8-1