Infineon Technologies BSC057N03MSGATMA1

BSC057N03 - 12V-300V N-CHANNEL P

Manufacturer: Infineon Technologies
Manufacturer's number: Infineon Technologies BSC057N03MSGATMA1
Package: Bulk
Datasheet: PDF
Stock: 6243
SKU: BSC057N03MSGATMA1
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Details

Parameters
Mfr	Infineon Technologies
Series	OptiMOS™
Package	Bulk
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	15A (Ta), 71A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	5.7mOhm @ 30A, 10V
Vgs(th) (Max) @ Id	2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	40 nC @ 10 V
Vgs (Max)	±16V
Input Capacitance (Ciss) (Max) @ Vds	3100 pF @ 15 V
FET Feature	-
Power Dissipation (Max)	2.5W (Ta), 45W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TDSON-8-5
Package / Case	8-PowerTDFN
Moisture Sensitivity Level (MSL)	Vendor Undefined
REACH Status	REACH Unaffected
Other Names	2156-BSC057N03MSGATMA1-448
Standard Package	1

N-Channel 30 V 15A (Ta), 71A (Tc) 2.5W (Ta), 45W (Tc) Surface Mount PG-TDSON-8-5