Infineon Technologies BSP320SL6327

SMALL-SIGNAL N-CHANNEL MOSFET

Manufacturer: Infineon Technologies
Manufacturer's number: Infineon Technologies BSP320SL6327
Package: Bulk
Datasheet: PDF
Stock: 2
SKU: BSP320SL6327
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Details

Parameters
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	2.9A (Tj)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	120mOhm @ 2.9A, 10V
Vgs(th) (Max) @ Id	4V @ 20µA
Gate Charge (Qg) (Max) @ Vgs	12 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	340 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	1.8W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-SOT223-4-21
Package / Case	TO-261-4, TO-261AA
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	1
Mfr	Infineon Technologies
Series	SIPMOS®
Package	Bulk
Product Status	Active
FET Type	N-Channel

N-Channel 60 V 2.9A (Tj) 1.8W (Ta) Surface Mount PG-SOT223-4-21