Parameters |
Mfr |
Infineon Technologies |
Series |
EasyPACK™ |
Package |
Tray |
Product Status |
Active |
FET Type |
N-Channel |
Technology |
SiC (Silicon Carbide Junction Transistor) |
Drain to Source Voltage (Vdss) |
1200 V |
Current - Continuous Drain (Id) @ 25°C |
45A (Tj) |
Drive Voltage (Max Rds On, Min Rds On) |
15V, 18V |
Rds On (Max) @ Id, Vgs |
16.2mOhm @ 50A, 18V |
Vgs(th) (Max) @ Id |
5.15V @ 20mA |
Gate Charge (Qg) (Max) @ Vgs |
149 nC @ 18 V |
Vgs (Max) |
+20V, -7V |
Input Capacitance (Ciss) (Max) @ Vds |
4400 pF @ 800 V |
FET Feature |
- |
Power Dissipation (Max) |
20mW |
Operating Temperature |
-40°C ~ 175°C (TJ) |
Mounting Type |
Chassis Mount |
Supplier Device Package |
- |
Package / Case |
Module |
Base Product Number |
DF17MR12 |
RoHS Status |
ROHS3 Compliant |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
REACH Status |
REACH Unaffected |
ECCN |
EAR99 |
HTSUS |
8541.29.0095 |
Standard Package |
24 |
N-Channel 1200 V 45A (Tj) 20mW Chassis Mount