Infineon Technologies IAUC26N10S5L245ATMA1

MOSFET_(75V 120V( PG-TDSON-8

Manufacturer: Infineon Technologies
Manufacturer's number: Infineon Technologies IAUC26N10S5L245ATMA1
Package: Tape & Reel (TR)
Datasheet: PDF
Stock: 9372
SKU: IAUC26N10S5L245ATMA1
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Unit Price: $0.5973

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Details

Parameters
Mfr	Infineon Technologies
Series	OptiMOS™
Package	Tape & Reel (TR)
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	26A (Tj)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	24.5mOhm @ 13A, 10V
Vgs(th) (Max) @ Id	2.2V @ 13µA
Gate Charge (Qg) (Max) @ Vgs	12 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	762 pF @ 50 V
FET Feature	-
Power Dissipation (Max)	40W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TDSON-8-33
Package / Case	8-PowerTDFN
RoHS Status	ROHS3 Compliant
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	5,000

N-Channel 100 V 26A (Tj) 40W (Tc) Surface Mount PG-TDSON-8-33