Infineon Technologies IGT60R070D1E8220ATMA1

GAN HV

Manufacturer: Infineon Technologies
Manufacturer's number: Infineon Technologies IGT60R070D1E8220ATMA1
Package: Bulk
Datasheet: -
Stock: 3554
SKU: IGT60R070D1E8220ATMA1
Pricing:we created an exceptionally flexible and competitive pricing policy.

Quantity:

Add to RFQ list

Details

Parameters
Mfr	Infineon Technologies
Series	CoolGaN™
Package	Bulk
Product Status	Obsolete
FET Type	N-Channel
Technology	GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)	600 V
Current - Continuous Drain (Id) @ 25°C	31A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	-
Rds On (Max) @ Id, Vgs	-
Vgs(th) (Max) @ Id	1.6V @ 2.6mA
Vgs (Max)	-10V
Input Capacitance (Ciss) (Max) @ Vds	380 pF @ 400 V
FET Feature	-
Power Dissipation (Max)	125W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-HSOF-8-3
Package / Case	8-PowerSFN
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	1

N-Channel 600 V 31A (Tc) 125W (Tc) Surface Mount PG-HSOF-8-3