Infineon Technologies IMBG120R350M1HXTMA1

SICFET N-CH 1.2KV 4.7A TO263

Manufacturer: Infineon Technologies
Manufacturer's number: Infineon Technologies IMBG120R350M1HXTMA1
Package: Tape & Reel (TR)
Datasheet: PDF
Stock: 980
SKU: IMBG120R350M1HXTMA1
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Details

Parameters
Mfr	Infineon Technologies
Series	CoolSiC™
Package	Tape & Reel (TR)
Product Status	Active
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	1200 V
Current - Continuous Drain (Id) @ 25°C	4.7A (Tc)
Rds On (Max) @ Id, Vgs	468mOhm @ 2A, 18V
Vgs(th) (Max) @ Id	5.7V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	5.9 nC @ 18 V
Vgs (Max)	+18V, -15V
Input Capacitance (Ciss) (Max) @ Vds	196 pF @ 800 V
FET Feature	Standard
Power Dissipation (Max)	65W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TO263-7-12
Package / Case	TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Base Product Number	IMBG120
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	1,000

N-Channel 1200 V 4.7A (Tc) 65W (Tc) Surface Mount PG-TO263-7-12