Infineon Technologies IMBG65R107M1HXTMA1

SILICON CARBIDE MOSFET PG-TO263-

Manufacturer: Infineon Technologies
Manufacturer's number: Infineon Technologies IMBG65R107M1HXTMA1
Package: Tape & Reel (TR)
Datasheet: PDF
Stock: 9444
SKU: IMBG65R107M1HXTMA1
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Unit Price: $9.0900

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Details

Parameters
Mfr	Infineon Technologies
Series	CoolSIC™ M1
Package	Tape & Reel (TR)
Product Status	Active
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	24A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	18V
Rds On (Max) @ Id, Vgs	141mOhm @ 8.9A, 18V
Vgs(th) (Max) @ Id	5.7V @ 2.6mA
Gate Charge (Qg) (Max) @ Vgs	15 nC @ 18 V
Vgs (Max)	+23V, -5V
Input Capacitance (Ciss) (Max) @ Vds	496 pF @ 400 V
FET Feature	-
Power Dissipation (Max)	110W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TO263-7-12
Package / Case	TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Base Product Number	IMBG65R
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	1,000

N-Channel 650 V 24A (Tc) 110W (Tc) Surface Mount PG-TO263-7-12