Infineon Technologies IMW120R040M1HXKSA1

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Manufacturer: Infineon Technologies
Manufacturer's number: Infineon Technologies IMW120R040M1HXKSA1
Package: Tube
Datasheet: PDF
Stock: 9781
SKU: IMW120R040M1HXKSA1
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Unit Price: $21.3000

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Details

Parameters
Mfr	Infineon Technologies
Series	CoolSiC™
Package	Tube
Product Status	Active
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	1200 V
Current - Continuous Drain (Id) @ 25°C	55A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	15V, 18V
Rds On (Max) @ Id, Vgs	54.4mOhm @ 19.3A, 18V
Vgs(th) (Max) @ Id	5.2V @ 10mA
Gate Charge (Qg) (Max) @ Vgs	39 nC @ 18 V
Vgs (Max)	+20V, -5V
Input Capacitance (Ciss) (Max) @ Vds	1620 nF @ 25 V
FET Feature	-
Power Dissipation (Max)	227W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PG-TO247-3
Package / Case	TO-247-3
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	30

N-Channel 1200 V 55A (Tc) 227W (Tc) Through Hole PG-TO247-3