Infineon Technologies IMW65R030M1HXKSA1

SILICON CARBIDE MOSFET, PG-TO247

Manufacturer: Infineon Technologies
Manufacturer's number: Infineon Technologies IMW65R030M1HXKSA1
Package: Tube
Datasheet: PDF
Stock: 3281
SKU: IMW65R030M1HXKSA1
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Unit Price: $21.6000

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Details

Parameters
Mfr	Infineon Technologies
Series	CoolSiC™
Package	Tube
Product Status	Active
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	58A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	18V
Rds On (Max) @ Id, Vgs	42mOhm @ 29.5A, 18V
Vgs(th) (Max) @ Id	5.7V @ 8.8mA
Gate Charge (Qg) (Max) @ Vgs	48 nC @ 18 V
Vgs (Max)	+20V, -2V
Input Capacitance (Ciss) (Max) @ Vds	1643 pF @ 400 V
FET Feature	-
Power Dissipation (Max)	197W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PG-TO247-3-41
Package / Case	TO-247-3
Base Product Number	IMW65R
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	30

N-Channel 650 V 58A (Tc) 197W (Tc) Through Hole PG-TO247-3-41