Infineon Technologies IPA60R125P6

POWER FIELD-EFFECT TRANSISTOR

Manufacturer: Infineon Technologies
Manufacturer's number: Infineon Technologies IPA60R125P6
Package: Bulk
Datasheet: PDF
Stock: 9342
SKU: IPA60R125P6
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Details

Parameters
Mfr	Infineon Technologies
Series	CoolMOS™
Package	Bulk
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V
Current - Continuous Drain (Id) @ 25°C	30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	125mOhm @ 11.6A, 10V
Vgs(th) (Max) @ Id	4.5V @ 960µA
Gate Charge (Qg) (Max) @ Vgs	56 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2660 pF @ 100 V
FET Feature	-
Power Dissipation (Max)	34W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PG-TO220-3-111
Package / Case	TO-220-3 Full Pack
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	1

N-Channel 600 V 30A (Tc) 34W (Tc) Through Hole PG-TO220-3-111