Infineon Technologies IPAN60R600P7SXKSA1

IPAN60R600P7SXKSA1

Manufacturer: Infineon Technologies
Manufacturer's number: Infineon Technologies IPAN60R600P7SXKSA1
Package: Tube
Datasheet: PDF
Stock: 400
SKU: IPAN60R600P7SXKSA1
Pricing:we created an exceptionally flexible and competitive pricing policy.

Quantity:

Add to Cart

Unit Price: $1.3300

Ext Price: $1.3300

Details

Parameters
Mfr	Infineon Technologies
Series	CoolMOS™ P7
Package	Tube
Product Status	Not For New Designs
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	600mOhm @ 1.7A, 10V
Vgs(th) (Max) @ Id	4V @ 80µA
Gate Charge (Qg) (Max) @ Vgs	9 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	363 pF @ 400 V
FET Feature	-
Power Dissipation (Max)	21W (Tc)
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PG-TO220 Full Pack
Package / Case	TO-220-3 Full Pack
Base Product Number	IPAN60
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	Not Applicable
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	50

N-Channel 650 V 6A (Tc) 21W (Tc) Through Hole PG-TO220 Full Pack