Infineon Technologies IPB031NE7N3G

IPB031NE7 - 12V-300V N-CHANNEL P

Manufacturer: Infineon Technologies
Manufacturer's number: Infineon Technologies IPB031NE7N3G
Package: Bulk
Datasheet: PDF
Stock: 3058
SKU: IPB031NE7N3G
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Details

Parameters
Mfr	Infineon Technologies
Series	OptiMOS™ 3
Package	Bulk
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	75 V
Current - Continuous Drain (Id) @ 25°C	100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	3.1mOhm @ 100A, 10V
Vgs(th) (Max) @ Id	3.8V @ 155µA
Gate Charge (Qg) (Max) @ Vgs	117 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	8130 pF @ 37.5 V
FET Feature	-
Power Dissipation (Max)	214W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TO263-3-2
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
ECCN	EAR99
HTSUS	8542.39.0001
Standard Package	1

N-Channel 75 V 100A (Tc) 214W (Tc) Surface Mount PG-TO263-3-2