Infineon Technologies IPB65R150CFDATMA1

HIGH POWER_LEGACY

Manufacturer: Infineon Technologies
Manufacturer's number: Infineon Technologies IPB65R150CFDATMA1
Package: Bulk
Datasheet: PDF
Stock: 6967
SKU: IPB65R150CFDATMA1
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Details

Parameters
Mfr	Infineon Technologies
Series	CoolMOS™
Package	Bulk
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	22.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	150mOhm @ 9.3A, 10V
Vgs(th) (Max) @ Id	4.5V @ 900µA
Gate Charge (Qg) (Max) @ Vgs	86 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2340 pF @ 100 V
FET Feature	-
Power Dissipation (Max)	195.3W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TO263-3
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Moisture Sensitivity Level (MSL)	Vendor Undefined
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	0000.00.0000
Other Names	2156-IPB65R150CFDATMA1-448
Standard Package	1

N-Channel 650 V 22.4A (Tc) 195.3W (Tc) Surface Mount PG-TO263-3